F1010N Datasheet, International Rectifier

- DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF1010N Peak Diode Recovery dv/.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .